Polarization dependence of intraband absorption in self-organized quantum dots

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.122347

Title:	Polarization dependence of intraband absorption in self-organized quantum dots
Authors:	Chua, S.J. Xu, S.J. Zhang, X.H. Wang, X.C. Mei, T. Fan, W.J. Wang, C.H. Jiang, J. Xie, X.G.
Issue Date:	1998
Citation:	Chua, S.J., Xu, S.J., Zhang, X.H., Wang, X.C., Mei, T., Fan, W.J., Wang, C.H., Jiang, J., Xie, X.G. (1998). Polarization dependence of intraband absorption in self-organized quantum dots. Applied Physics Letters 73 (14) : 1997-1999. ScholarBank@NUS Repository. https://doi.org/10.1063/1.122347
Abstract:	Photoluminescence and intraband absorption were investigated in n-doped self-organized InAs and In0.35Ga0.65As quantum dots grown on a GaAs substrate. Intraband absorption of the dots is strongly polarized along the growth axis in the mid infrared spectral range. The absorption is maximum at around 120 meV for InAs dots and at 130 meV for In0.35Ga0.65As dots. The experimental results on InAs dots are in agreement with published theoretical calculations. © 1998 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/80994
ISSN:	00036951
DOI:	10.1063/1.122347
Appears in Collections:	Staff Publications

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