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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.122347
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dc.titlePolarization dependence of intraband absorption in self-organized quantum dots
dc.contributor.authorChua, S.J.
dc.contributor.authorXu, S.J.
dc.contributor.authorZhang, X.H.
dc.contributor.authorWang, X.C.
dc.contributor.authorMei, T.
dc.contributor.authorFan, W.J.
dc.contributor.authorWang, C.H.
dc.contributor.authorJiang, J.
dc.contributor.authorXie, X.G.
dc.date.accessioned2014-10-07T03:03:30Z
dc.date.available2014-10-07T03:03:30Z
dc.date.issued1998
dc.identifier.citationChua, S.J., Xu, S.J., Zhang, X.H., Wang, X.C., Mei, T., Fan, W.J., Wang, C.H., Jiang, J., Xie, X.G. (1998). Polarization dependence of intraband absorption in self-organized quantum dots. Applied Physics Letters 73 (14) : 1997-1999. ScholarBank@NUS Repository. https://doi.org/10.1063/1.122347
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80994
dc.description.abstractPhotoluminescence and intraband absorption were investigated in n-doped self-organized InAs and In0.35Ga0.65As quantum dots grown on a GaAs substrate. Intraband absorption of the dots is strongly polarized along the growth axis in the mid infrared spectral range. The absorption is maximum at around 120 meV for InAs dots and at 130 meV for In0.35Ga0.65As dots. The experimental results on InAs dots are in agreement with published theoretical calculations. © 1998 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.122347
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.contributor.departmentINST OF MATERIALS RESEARCH & ENGINEERING
dc.description.doi10.1063/1.122347
dc.description.sourcetitleApplied Physics Letters
dc.description.volume73
dc.description.issue14
dc.description.page1997-1999
dc.description.codenAPPLA
dc.identifier.isiut000076183300025
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