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Title: Electronic structure of (111)-GaAsP/AlGaAs strained-layer quantum wells
Authors: Zhang, X. 
Ishikawa, M.
Yaguchi, H.
Onabe, K.
Keywords: Photoreflectance spectroscopy
Piezoelctric effect
Quantum well
X-ray diffraction
Issue Date: 8-Oct-1997
Citation: Zhang, X.,Ishikawa, M.,Yaguchi, H.,Onabe, K. (1997-10-08). Electronic structure of (111)-GaAsP/AlGaAs strained-layer quantum wells. Surface Science 387 (1-3) : 371-382. ScholarBank@NUS Repository.
Abstract: The GaAs1-xPx/AlyGa1-yAs (x = 0.07-0.14, y = 0.3) strained-layer multiple quantum wells grown by metal-organic vapor phase epitaxy on GaAs-(111)B substrates have been characterized by X-ray diffraction and photoreflectance (PR) spectroscopy. By fitting the experimental results with the calculation which was based on the deformation potential theory modified by the strain-induced piezoelectric field, the energy band offset ratio for the conduction band at the heterointerface of GaAs1-xPx/AlyGa1-yAs was quantitatively determined to be Qc = 0.61 ± 0.03. This value was found to be nearly independent of the phosphorous composition x in the whole region that has been investigated in this study. Moreover, several anomalous phenomena observed with the PR measurement as well as the possible physical origins have also been discussed. © 1997 Elsevier Science B.V.
Source Title: Surface Science
ISSN: 00396028
Appears in Collections:Staff Publications

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