Electronic structure of (111)-GaAsP/AlGaAs strained-layer quantum wells

Abstract

The GaAs1-xPx/AlyGa1-yAs (x = 0.07-0.14, y = 0.3) strained-layer multiple quantum wells grown by metal-organic vapor phase epitaxy on GaAs-(111)B substrates have been characterized by X-ray diffraction and photoreflectance (PR) spectroscopy. By fitting the experimental results with the calculation which was based on the deformation potential theory modified by the strain-induced piezoelectric field, the energy band offset ratio for the conduction band at the heterointerface of GaAs1-xPx/AlyGa1-yAs was quantitatively determined to be Qc = 0.61 ± 0.03. This value was found to be nearly independent of the phosphorous composition x in the whole region that has been investigated in this study. Moreover, several anomalous phenomena observed with the PR measurement as well as the possible physical origins have also been discussed. © 1997 Elsevier Science B.V.