Covalent attachment of acetonitrile on Si(100) through Si-C and Si-N linkages

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1410388

Title:	Covalent attachment of acetonitrile on Si(100) through Si-C and Si-N linkages
Authors:	Tao, F. Wang, Z.H. Qiao, M.H. Liu, Q. Sim, W.S. Xu, G.Q.
Issue Date:	8-Nov-2001
Citation:	Tao, F., Wang, Z.H., Qiao, M.H., Liu, Q., Sim, W.S., Xu, G.Q. (2001-11-08). Covalent attachment of acetonitrile on Si(100) through Si-C and Si-N linkages. Journal of Chemical Physics 115 (18) : 8563-8569. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1410388
Abstract:	An analysis of covalent binding and adsorption states of acetonitrile on Si(100) was performed. For this analysis temperature programmed desorption (TPD), X-ray photoelectron spectroscopy (XPS), high-resolution electron energy loss spectroscopy (HREELS) and density functional theory (DFT) were used. The results showed that acetonitrile chemisorbs on Si(100) in a side-on di-σ binding configuration forming Si-C and Si-N σ bonds.
Source Title:	Journal of Chemical Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/75831
ISSN:	00219606
DOI:	10.1063/1.1410388
Appears in Collections:	Staff Publications

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