Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1410388
Title: Covalent attachment of acetonitrile on Si(100) through Si-C and Si-N linkages
Authors: Tao, F.
Wang, Z.H.
Qiao, M.H.
Liu, Q.
Sim, W.S. 
Xu, G.Q. 
Issue Date: 8-Nov-2001
Citation: Tao, F., Wang, Z.H., Qiao, M.H., Liu, Q., Sim, W.S., Xu, G.Q. (2001-11-08). Covalent attachment of acetonitrile on Si(100) through Si-C and Si-N linkages. Journal of Chemical Physics 115 (18) : 8563-8569. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1410388
Abstract: An analysis of covalent binding and adsorption states of acetonitrile on Si(100) was performed. For this analysis temperature programmed desorption (TPD), X-ray photoelectron spectroscopy (XPS), high-resolution electron energy loss spectroscopy (HREELS) and density functional theory (DFT) were used. The results showed that acetonitrile chemisorbs on Si(100) in a side-on di-σ binding configuration forming Si-C and Si-N σ bonds.
Source Title: Journal of Chemical Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/75831
ISSN: 00219606
DOI: 10.1063/1.1410388
Appears in Collections:Staff Publications

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