An improved switched-capacitor resonator for high-speed bandpass ΣΔ Modulator

Abstract

This paper presents an improved single-path switched-capacitor resonator with a gain of 0.5. The proposed resonator significantly reduces the worst-case capacitive loading and allows fast settling during the operation. The resonator is designed using a 0.8-μm CMOS technology. The simulation result shows that the worst-case settling time (0.1 percent accuracy) of the proposed resonator is 14.7ns, about 40% fast than the previously reported ones. A fourth order bandpass ΣΔ modulator is constructed with the proposed resonator and its performance is verified by simulation.