An improved switched-capacitor resonator for high-speed bandpass ΣΔ Modulator

Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/72476

DC Field	Value
dc.title	An improved switched-capacitor resonator for high-speed bandpass ΣΔ Modulator
dc.contributor.author	Guan, X.
dc.contributor.author	Xu, Y.P.
dc.date.accessioned	2014-06-19T05:08:29Z
dc.date.available	2014-06-19T05:08:29Z
dc.date.issued	2000
dc.identifier.citation	Guan, X.,Xu, Y.P. (2000). An improved switched-capacitor resonator for high-speed bandpass ΣΔ Modulator. IEEE Asia-Pacific Conference on Circuits and Systems - Proceedings : 662-665. ScholarBank@NUS Repository.
dc.identifier.uri	http://scholarbank.nus.edu.sg/handle/10635/72476
dc.description.abstract	This paper presents an improved single-path switched-capacitor resonator with a gain of 0.5. The proposed resonator significantly reduces the worst-case capacitive loading and allows fast settling during the operation. The resonator is designed using a 0.8-μm CMOS technology. The simulation result shows that the worst-case settling time (0.1 percent accuracy) of the proposed resonator is 14.7ns, about 40% fast than the previously reported ones. A fourth order bandpass ΣΔ modulator is constructed with the proposed resonator and its performance is verified by simulation.
dc.source	Scopus
dc.type	Conference Paper
dc.contributor.department	ELECTRICAL ENGINEERING
dc.description.sourcetitle	IEEE Asia-Pacific Conference on Circuits and Systems - Proceedings
dc.description.page	662-665
dc.description.coden	85RMA
dc.identifier.isiut	NOT_IN_WOS
Appears in Collections:	Staff Publications

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