Low switching current flux-closed magnetoresistive random access memory

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1557372

Title:	Low switching current flux-closed magnetoresistive random access memory
Authors:	Zheng, Y.K. Wu, Y.H. Li, K.B. Qiu, J.J. Shen, Y.T. An, L.H. Guo, Z.B. Han, G.C. Luo, P. You, D. Liu, Z.Y.
Issue Date:	15-May-2003
Citation:	Zheng, Y.K., Wu, Y.H., Li, K.B., Qiu, J.J., Shen, Y.T., An, L.H., Guo, Z.B., Han, G.C., Luo, P., You, D., Liu, Z.Y. (2003-05-15). Low switching current flux-closed magnetoresistive random access memory. Journal of Applied Physics 93 (10 2) : 7307-7309. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1557372
Abstract:	Low switching current flux-closed magnetoresistive random access memory was analyzed. It was found that the switching field increases under the uniform external field, and the switching field has no change under the bit current field. Results showed that the bit current of 10 mA was sufficient to switch the 1 μm×4 μm cell.
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/70840
ISSN:	00218979
DOI:	10.1063/1.1557372
Appears in Collections:	Staff Publications

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