Please use this identifier to cite or link to this item:
|Title:||Low switching current flux-closed magnetoresistive random access memory|
|Citation:||Zheng, Y.K., Wu, Y.H., Li, K.B., Qiu, J.J., Shen, Y.T., An, L.H., Guo, Z.B., Han, G.C., Luo, P., You, D., Liu, Z.Y. (2003-05-15). Low switching current flux-closed magnetoresistive random access memory. Journal of Applied Physics 93 (10 2) : 7307-7309. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1557372|
|Abstract:||Low switching current flux-closed magnetoresistive random access memory was analyzed. It was found that the switching field increases under the uniform external field, and the switching field has no change under the bit current field. Results showed that the bit current of 10 mA was sufficient to switch the 1 μm×4 μm cell.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 11, 2018
WEB OF SCIENCETM
checked on Sep 25, 2018
checked on Oct 6, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.