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|Title:||Low switching current flux-closed magnetoresistive random access memory|
|Citation:||Zheng, Y.K., Wu, Y.H., Li, K.B., Qiu, J.J., Shen, Y.T., An, L.H., Guo, Z.B., Han, G.C., Luo, P., You, D., Liu, Z.Y. (2003-05-15). Low switching current flux-closed magnetoresistive random access memory. Journal of Applied Physics 93 (10 2) : 7307-7309. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1557372|
|Abstract:||Low switching current flux-closed magnetoresistive random access memory was analyzed. It was found that the switching field increases under the uniform external field, and the switching field has no change under the bit current field. Results showed that the bit current of 10 mA was sufficient to switch the 1 μm×4 μm cell.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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