Highly strained quantum structures grown on GaAs (0 0 1) vicinal substrate by MOCVD

Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2005.12.054

Title:	Highly strained quantum structures grown on GaAs (0 0 1) vicinal substrate by MOCVD
Authors:	Wang, B. Chua, S.-J. Dong, J. Wang, Y.
Keywords:	A1. Nanostructures A3. MOCVD B2. Semiconducting III-V materials
Issue Date:	2-Feb-2006
Citation:	Wang, B., Chua, S.-J., Dong, J., Wang, Y. (2006-02-02). Highly strained quantum structures grown on GaAs (0 0 1) vicinal substrate by MOCVD. Journal of Crystal Growth 288 (1) : 61-64. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2005.12.054
Abstract:	In this paper, we report experimental results regarding highly strained InP and InAs/InP quantum nanostructures grown on vicinal GaAs (0 0 1) substrate with 7° miscut towards (1 1 0) orientation by MOCVD using TBA and TBP as group V sources. Formation of well-aligned wire nanostructures has been observed, which may be attributed to the effects of multi-atomic steps formed during GaAs buffer layer growth. We also observed strong photoluminescence from these nanostructures even for the type II band gap alignment of the InP/GaAs quantum wires. Our results show a possible way for fabricating low-dimensional quantum nanostructures with band gap engineering. © 2005 Elsevier B.V. All rights reserved.
Source Title:	Journal of Crystal Growth
URI:	http://scholarbank.nus.edu.sg/handle/10635/70480
ISSN:	00220248
DOI:	10.1016/j.jcrysgro.2005.12.054
Appears in Collections:	Staff Publications

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