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Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2005.12.054
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dc.titleHighly strained quantum structures grown on GaAs (0 0 1) vicinal substrate by MOCVD
dc.contributor.authorWang, B.
dc.contributor.authorChua, S.-J.
dc.contributor.authorDong, J.
dc.contributor.authorWang, Y.
dc.date.accessioned2014-06-19T03:12:37Z
dc.date.available2014-06-19T03:12:37Z
dc.date.issued2006-02-02
dc.identifier.citationWang, B., Chua, S.-J., Dong, J., Wang, Y. (2006-02-02). Highly strained quantum structures grown on GaAs (0 0 1) vicinal substrate by MOCVD. Journal of Crystal Growth 288 (1) : 61-64. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2005.12.054
dc.identifier.issn00220248
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70480
dc.description.abstractIn this paper, we report experimental results regarding highly strained InP and InAs/InP quantum nanostructures grown on vicinal GaAs (0 0 1) substrate with 7° miscut towards (1 1 0) orientation by MOCVD using TBA and TBP as group V sources. Formation of well-aligned wire nanostructures has been observed, which may be attributed to the effects of multi-atomic steps formed during GaAs buffer layer growth. We also observed strong photoluminescence from these nanostructures even for the type II band gap alignment of the InP/GaAs quantum wires. Our results show a possible way for fabricating low-dimensional quantum nanostructures with band gap engineering. © 2005 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jcrysgro.2005.12.054
dc.sourceScopus
dc.subjectA1. Nanostructures
dc.subjectA3. MOCVD
dc.subjectB2. Semiconducting III-V materials
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.jcrysgro.2005.12.054
dc.description.sourcetitleJournal of Crystal Growth
dc.description.volume288
dc.description.issue1
dc.description.page61-64
dc.description.codenJCRGA
dc.identifier.isiut000235581800015
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