Electromganetic field control of electron spin magnetic resonance frequency in silicon donors for solid-state quantum computing

Please use this identifier to cite or link to this item: https://doi.org/10.1109/APS.2011.5996607

Title:	Electromganetic field control of electron spin magnetic resonance frequency in silicon donors for solid-state quantum computing
Authors:	Mirzaei, H. Hui, H.T.
Keywords:	nuclear magnetic resonance perturbation methods Quantum theory
Issue Date:	2011
Citation:	Mirzaei, H.,Hui, H.T. (2011). Electromganetic field control of electron spin magnetic resonance frequency in silicon donors for solid-state quantum computing. IEEE Antennas and Propagation Society, AP-S International Symposium (Digest) : 1601-1604. ScholarBank@NUS Repository. https://doi.org/10.1109/APS.2011.5996607
Abstract:	The electron-spin magnetic resonance frequency of an electron-spin qubit structure proposed for the realization of a quantum computer is rigorously determined by a numerical method. The potential distribution inside the silicon qubit structure is accurately calculated by an electromagnetic simulation method and the perturbation theory to the second order is formulated to obtain the magnetic resonance frequency of the phosphorus donor electron spin. © 2011 IEEE.
Source Title:	IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)
URI:	http://scholarbank.nus.edu.sg/handle/10635/70146
ISBN:	9781424495634
ISSN:	15223965
DOI:	10.1109/APS.2011.5996607
Appears in Collections:	Staff Publications

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