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|Title:||Characterization and modeling of avalanche multiplication in HBTs||Authors:||Lin, F.
Bipolar transistor modeling
|Issue Date:||2-Jan-2002||Citation:||Lin, F., Chen, B., Zhou, T., Ooi, B.L., Kooi, P.S. (2002-01-02). Characterization and modeling of avalanche multiplication in HBTs. Microelectronics Journal 33 (1-2) : 39-43. ScholarBank@NUS Repository. https://doi.org/10.1016/S0026-2692(01)00102-1||Abstract:||The accurate modeling of weak avalanche breakdown of HBTs in compact bipolar transistor models for circuit simulation is presented. Based on various device electrical characteristics that are grouped into three classes, a modified VBIC avalanche multiplication model is proposed. By simply replacing one constant avalanche model parameter with current linear dependence, the new model predicts well broad behaviors of breakdown from weak avalanche up into high level injections. © 2002 Elsevier Science Ltd. All rights reserved.||Source Title:||Microelectronics Journal||URI:||http://scholarbank.nus.edu.sg/handle/10635/69582||ISSN:||00262692||DOI:||10.1016/S0026-2692(01)00102-1|
|Appears in Collections:||Staff Publications|
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