Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0026-2692(01)00102-1
Title: Characterization and modeling of avalanche multiplication in HBTs
Authors: Lin, F.
Chen, B. 
Zhou, T.
Ooi, B.L. 
Kooi, P.S. 
Keywords: Avalanche multiplication
Bipolar transistor modeling
Compact model
Parameter extraction
SiGe HBT
VBIC
Issue Date: 2-Jan-2002
Citation: Lin, F., Chen, B., Zhou, T., Ooi, B.L., Kooi, P.S. (2002-01-02). Characterization and modeling of avalanche multiplication in HBTs. Microelectronics Journal 33 (1-2) : 39-43. ScholarBank@NUS Repository. https://doi.org/10.1016/S0026-2692(01)00102-1
Abstract: The accurate modeling of weak avalanche breakdown of HBTs in compact bipolar transistor models for circuit simulation is presented. Based on various device electrical characteristics that are grouped into three classes, a modified VBIC avalanche multiplication model is proposed. By simply replacing one constant avalanche model parameter with current linear dependence, the new model predicts well broad behaviors of breakdown from weak avalanche up into high level injections. © 2002 Elsevier Science Ltd. All rights reserved.
Source Title: Microelectronics Journal
URI: http://scholarbank.nus.edu.sg/handle/10635/69582
ISSN: 00262692
DOI: 10.1016/S0026-2692(01)00102-1
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