Please use this identifier to cite or link to this item:
|Title:||Characterization and modeling of avalanche multiplication in HBTs|
Bipolar transistor modeling
|Citation:||Lin, F., Chen, B., Zhou, T., Ooi, B.L., Kooi, P.S. (2002-01-02). Characterization and modeling of avalanche multiplication in HBTs. Microelectronics Journal 33 (1-2) : 39-43. ScholarBank@NUS Repository. https://doi.org/10.1016/S0026-2692(01)00102-1|
|Abstract:||The accurate modeling of weak avalanche breakdown of HBTs in compact bipolar transistor models for circuit simulation is presented. Based on various device electrical characteristics that are grouped into three classes, a modified VBIC avalanche multiplication model is proposed. By simply replacing one constant avalanche model parameter with current linear dependence, the new model predicts well broad behaviors of breakdown from weak avalanche up into high level injections. © 2002 Elsevier Science Ltd. All rights reserved.|
|Source Title:||Microelectronics Journal|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 14, 2018
WEB OF SCIENCETM
checked on Jun 20, 2018
checked on May 18, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.