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|Title:||A partial SOI technology for single-chip RF power amplifiers||Authors:||Cai, J.
|Issue Date:||2001||Citation:||Cai, J.,Ren, C.,Liang, Y.C.,Balasubramanian, N.,Sin, J.K.O. (2001). A partial SOI technology for single-chip RF power amplifiers. Technical Digest - International Electron Devices Meeting : 891-894. ScholarBank@NUS Repository.||Abstract:||The technology of forming partial SOI (silicon on insulator) platform on conventional bulk wafer is proposed. RF LDMOS devices with high power-added efficiency and on-chip high-Q value micro-inductors were fabricated for 2 GHz power amplifier applications by using the proposed technology. Devices were verified by the laboratory measurement results.||Source Title:||Technical Digest - International Electron Devices Meeting||URI:||http://scholarbank.nus.edu.sg/handle/10635/69000||ISSN:||01631918|
|Appears in Collections:||Staff Publications|
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