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https://scholarbank.nus.edu.sg/handle/10635/69000
| Title: | A partial SOI technology for single-chip RF power amplifiers | Authors: | Cai, J. Ren, C. Liang, Y.C. Balasubramanian, N. Sin, J.K.O. |
Issue Date: | 2001 | Citation: | Cai, J.,Ren, C.,Liang, Y.C.,Balasubramanian, N.,Sin, J.K.O. (2001). A partial SOI technology for single-chip RF power amplifiers. Technical Digest - International Electron Devices Meeting : 891-894. ScholarBank@NUS Repository. | Abstract: | The technology of forming partial SOI (silicon on insulator) platform on conventional bulk wafer is proposed. RF LDMOS devices with high power-added efficiency and on-chip high-Q value micro-inductors were fabricated for 2 GHz power amplifier applications by using the proposed technology. Devices were verified by the laboratory measurement results. | Source Title: | Technical Digest - International Electron Devices Meeting | URI: | http://scholarbank.nus.edu.sg/handle/10635/69000 | ISSN: | 01631918 |
| Appears in Collections: | Staff Publications |
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