Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/69000
Title: A partial SOI technology for single-chip RF power amplifiers
Authors: Cai, J.
Ren, C.
Liang, Y.C. 
Balasubramanian, N. 
Sin, J.K.O.
Issue Date: 2001
Source: Cai, J.,Ren, C.,Liang, Y.C.,Balasubramanian, N.,Sin, J.K.O. (2001). A partial SOI technology for single-chip RF power amplifiers. Technical Digest - International Electron Devices Meeting : 891-894. ScholarBank@NUS Repository.
Abstract: The technology of forming partial SOI (silicon on insulator) platform on conventional bulk wafer is proposed. RF LDMOS devices with high power-added efficiency and on-chip high-Q value micro-inductors were fabricated for 2 GHz power amplifier applications by using the proposed technology. Devices were verified by the laboratory measurement results.
Source Title: Technical Digest - International Electron Devices Meeting
URI: http://scholarbank.nus.edu.sg/handle/10635/69000
ISSN: 01631918
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

41
checked on Dec 9, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.