130-GHz gain-enhanced SiGe low noise amplifier

Please use this identifier to cite or link to this item: https://doi.org/10.1109/ASSCC.2010.5716611

Title:	130-GHz gain-enhanced SiGe low noise amplifier
Authors:	Zhang, B. Xiong, Y.-Z. Wang, L. Hu, S. Lim, T.G. Zhuang, Y.-Q. Li, L.-W. Yuan, X.
Issue Date:	2010
Citation:	Zhang, B.,Xiong, Y.-Z.,Wang, L.,Hu, S.,Lim, T.G.,Zhuang, Y.-Q.,Li, L.-W.,Yuan, X. (2010). 130-GHz gain-enhanced SiGe low noise amplifier. 2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010 : 285-288. ScholarBank@NUS Repository. https://doi.org/10.1109/ASSCC.2010.5716611
Abstract:	A 130 GHz low noise amplifier (LNA) in 0.13-μm SiGe BiCMOS technology has been designed and characterized. The gain-boosted cascode topology with 3D grounded-shielding structures is employed. The results showed that the LNA with a chip area of 400 μm X 900 μm, gain of ∼17.5 dB with a 3-dB bandwidth of ∼25 GHz, and noise figure of ∼7.7 dB at 130 GHz with total dc power consumption of 31.5 mW has demonstrated. ©2010 IEEE.
Source Title:	2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010
URI:	http://scholarbank.nus.edu.sg/handle/10635/68668
ISBN:	9781424482979
DOI:	10.1109/ASSCC.2010.5716611
Appears in Collections:	Staff Publications

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