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|Title:||130-GHz gain-enhanced SiGe low noise amplifier||Authors:||Zhang, B.
|Issue Date:||2010||Citation:||Zhang, B.,Xiong, Y.-Z.,Wang, L.,Hu, S.,Lim, T.G.,Zhuang, Y.-Q.,Li, L.-W.,Yuan, X. (2010). 130-GHz gain-enhanced SiGe low noise amplifier. 2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010 : 285-288. ScholarBank@NUS Repository. https://doi.org/10.1109/ASSCC.2010.5716611||Abstract:||A 130 GHz low noise amplifier (LNA) in 0.13-μm SiGe BiCMOS technology has been designed and characterized. The gain-boosted cascode topology with 3D grounded-shielding structures is employed. The results showed that the LNA with a chip area of 400 μm X 900 μm, gain of ∼17.5 dB with a 3-dB bandwidth of ∼25 GHz, and noise figure of ∼7.7 dB at 130 GHz with total dc power consumption of 31.5 mW has demonstrated. ©2010 IEEE.||Source Title:||2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010||URI:||http://scholarbank.nus.edu.sg/handle/10635/68668||ISBN:||9781424482979||DOI:||10.1109/ASSCC.2010.5716611|
|Appears in Collections:||Staff Publications|
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