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|Title:||1/f noise analysis of ZnO nanowire and thin film||Authors:||Ke, L.
|Issue Date:||2008||Citation:||Ke, L., Li, W., Soo, J.C. (2008). 1/f noise analysis of ZnO nanowire and thin film. 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 : 1132-1136. ScholarBank@NUS Repository. https://doi.org/10.1109/INEC.2008.4585681||Abstract:||1/f noise spectral are obtained on ZnO nanowires thin films and ZnO hybrid materials at different concentration. Various 1/f noise models are used to analysis the results, the parameters such as: mobility, trap level and density, activation energy are extracted from the models. The results show that 1/f noise is a useful tool to monitor thin film and nanowires quality, as well as interface properties. By applying the models, the important parameters can be derived which is difficult to measure by other scientific instruments. © 2008 IEEE.||Source Title:||2008 2nd IEEE International Nanoelectronics Conference, INEC 2008||URI:||http://scholarbank.nus.edu.sg/handle/10635/68663||ISBN:||9781424415731||DOI:||10.1109/INEC.2008.4585681|
|Appears in Collections:||Staff Publications|
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