Please use this identifier to cite or link to this item: https://doi.org/10.1109/INEC.2008.4585681
DC FieldValue
dc.title1/f noise analysis of ZnO nanowire and thin film
dc.contributor.authorKe, L.
dc.contributor.authorLi, W.
dc.contributor.authorSoo, J.C.
dc.date.accessioned2014-06-19T02:51:49Z
dc.date.available2014-06-19T02:51:49Z
dc.date.issued2008
dc.identifier.citationKe, L., Li, W., Soo, J.C. (2008). 1/f noise analysis of ZnO nanowire and thin film. 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 : 1132-1136. ScholarBank@NUS Repository. https://doi.org/10.1109/INEC.2008.4585681
dc.identifier.isbn9781424415731
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/68663
dc.description.abstract1/f noise spectral are obtained on ZnO nanowires thin films and ZnO hybrid materials at different concentration. Various 1/f noise models are used to analysis the results, the parameters such as: mobility, trap level and density, activation energy are extracted from the models. The results show that 1/f noise is a useful tool to monitor thin film and nanowires quality, as well as interface properties. By applying the models, the important parameters can be derived which is difficult to measure by other scientific instruments. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/INEC.2008.4585681
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/INEC.2008.4585681
dc.description.sourcetitle2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
dc.description.page1132-1136
dc.identifier.isiut000259893500258
Appears in Collections:Staff Publications

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