Please use this identifier to cite or link to this item:
|Title:||The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding||Authors:||Yeong, S.H.
Transient enhanced diffusion
|Issue Date:||5-Dec-2008||Citation:||Yeong, S.H., Colombeau, B., Mok, K.R.C., Benistant, F., Liu, C.J., Wee, A.T.S., Dong, G., Chan, L., Srinivasan, M.P. (2008-12-05). The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 154-155 (1-3) : 43-48. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mseb.2008.09.028||Abstract:||In this paper, we show that boron transient enhanced diffusion can be reduced to different extents by varying the distribution of nitrogen atoms in the junction. This is attributed to the relative location of nitrogen atoms with respect to boron profile and end-of-range defect band, affecting the interactions between dopants and defects upon annealing. In addition, variations in boron dopant activation and deactivation are also observed. Similar to fluorine co-implantation, it is proposed that nitrogen atoms react with vacancy point defects to form nitrogen-vacancy clusters that will trap the interstitials emitted from end-of-range defects. However, we report that the interstitial sink efficiency of nitrogen atoms is not as good as the co-implanted carbon atoms, which is noticed from the dopant deactivation curves. In terms of extended defect evolution, the results clearly indicate that end-of-range defects can be stabilized by choosing the optimized co-implant condition of N. Finally, a deeper physical understanding on the diffusion/clustering pathways of nitrogen co-implantation is achieved to supplement and explain the boron diffusion and deactivation behaviors. © 2008 Elsevier B.V. All rights reserved.||Source Title:||Materials Science and Engineering B: Solid-State Materials for Advanced Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/64709||ISSN:||09215107||DOI:||10.1016/j.mseb.2008.09.028|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 17, 2019
WEB OF SCIENCETM
checked on Sep 17, 2019
checked on Sep 8, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.