The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding

Abstract

In this paper, we show that boron transient enhanced diffusion can be reduced to different extents by varying the distribution of nitrogen atoms in the junction. This is attributed to the relative location of nitrogen atoms with respect to boron profile and end-of-range defect band, affecting the interactions between dopants and defects upon annealing. In addition, variations in boron dopant activation and deactivation are also observed. Similar to fluorine co-implantation, it is proposed that nitrogen atoms react with vacancy point defects to form nitrogen-vacancy clusters that will trap the interstitials emitted from end-of-range defects. However, we report that the interstitial sink efficiency of nitrogen atoms is not as good as the co-implanted carbon atoms, which is noticed from the dopant deactivation curves. In terms of extended defect evolution, the results clearly indicate that end-of-range defects can be stabilized by choosing the optimized co-implant condition of N. Finally, a deeper physical understanding on the diffusion/clustering pathways of nitrogen co-implantation is achieved to supplement and explain the boron diffusion and deactivation behaviors. © 2008 Elsevier B.V. All rights reserved.