Random telegraphic signals in rapid thermal annealed silicon-silicon oxide system

Abstract

Random telegraphic signals (RTS) have been observed in large-area aluminium-silicon oxide-silicon capacitors, rapid thermal annealed (RTA) in argon at 600-700°C for 50 s. The noise spectra of these devices at higher biases showed a Lorenztian spectrum between 30-400 Hz. We suggested that the RTA process has produced weak spots in the devices. The filling and emptying process of a trap near the weak spot modulates the barrier height and resulted in the RTS and Lorentzian spectrum observed in these devices.