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https://scholarbank.nus.edu.sg/handle/10635/62674
Title: | Random telegraphic signals in rapid thermal annealed silicon-silicon oxide system | Authors: | Chim, W.K. Choi, W.K. Leong, K.K. Teh, L.K. |
Issue Date: | 15-Mar-2000 | Citation: | Chim, W.K., Choi, W.K., Leong, K.K., Teh, L.K. (2000-03-15). Random telegraphic signals in rapid thermal annealed silicon-silicon oxide system. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 72 (2) : 135-137. ScholarBank@NUS Repository. | Abstract: | Random telegraphic signals (RTS) have been observed in large-area aluminium-silicon oxide-silicon capacitors, rapid thermal annealed (RTA) in argon at 600-700°C for 50 s. The noise spectra of these devices at higher biases showed a Lorenztian spectrum between 30-400 Hz. We suggested that the RTA process has produced weak spots in the devices. The filling and emptying process of a trap near the weak spot modulates the barrier height and resulted in the RTS and Lorentzian spectrum observed in these devices. | Source Title: | Materials Science and Engineering B: Solid-State Materials for Advanced Technology | URI: | http://scholarbank.nus.edu.sg/handle/10635/62674 | ISSN: | 09215107 |
Appears in Collections: | Staff Publications |
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