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|Title:||Random telegraphic signals in rapid thermal annealed silicon-silicon oxide system||Authors:||Chim, W.K.
|Issue Date:||15-Mar-2000||Citation:||Chim, W.K., Choi, W.K., Leong, K.K., Teh, L.K. (2000-03-15). Random telegraphic signals in rapid thermal annealed silicon-silicon oxide system. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 72 (2) : 135-137. ScholarBank@NUS Repository.||Abstract:||Random telegraphic signals (RTS) have been observed in large-area aluminium-silicon oxide-silicon capacitors, rapid thermal annealed (RTA) in argon at 600-700°C for 50 s. The noise spectra of these devices at higher biases showed a Lorenztian spectrum between 30-400 Hz. We suggested that the RTA process has produced weak spots in the devices. The filling and emptying process of a trap near the weak spot modulates the barrier height and resulted in the RTS and Lorentzian spectrum observed in these devices.||Source Title:||Materials Science and Engineering B: Solid-State Materials for Advanced Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/62674||ISSN:||09215107|
|Appears in Collections:||Staff Publications|
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