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|Title:||Dynamic properties of optically switched bistable semiconductor lasers||Authors:||Li, L.
|Issue Date:||Jun-1996||Citation:||Li, L., Haldar, M.K., Teo, C.Y., Mendis, F.V.C. (1996-06). Dynamic properties of optically switched bistable semiconductor lasers. IEEE Journal of Quantum Electronics 32 (6) : 1009-1014. ScholarBank@NUS Repository. https://doi.org/10.1109/3.502378||Abstract:||The dynamic properties of optically switched semiconductor lasers biased from below-to-above threshold are presented theoretically. An analytic expression for the carrier density in the active region of a laser with respect to time is given to discuss the switching-off time. The numerical results show that the switching-on time and the switching-off time are governed by different mechanisms. They are related to the laser parameters for the free-running laser. They also depend on the optical power and the time duration of the input optical pulse and the frequency detuning between the frequency of the free-running laser and that of the input optical pulse. A small frequency detuning is desired to reduce both the switching-on and switching-off times. However, there is an optimal detuning to maximize the energy of the output optical pulse. On the other hand, for fixed detuning and injection power, a larger bias current results in a shorter switching-off time, but a lower bias current results in a shorter switching-on time.||Source Title:||IEEE Journal of Quantum Electronics||URI:||http://scholarbank.nus.edu.sg/handle/10635/62080||ISSN:||00189197||DOI:||10.1109/3.502378|
|Appears in Collections:||Staff Publications|
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