Please use this identifier to cite or link to this item:
Title: Dynamic properties of optically switched bistable semiconductor lasers
Authors: Li, L. 
Haldar, M.K.
Teo, C.Y.
Mendis, F.V.C. 
Issue Date: Jun-1996
Citation: Li, L., Haldar, M.K., Teo, C.Y., Mendis, F.V.C. (1996-06). Dynamic properties of optically switched bistable semiconductor lasers. IEEE Journal of Quantum Electronics 32 (6) : 1009-1014. ScholarBank@NUS Repository.
Abstract: The dynamic properties of optically switched semiconductor lasers biased from below-to-above threshold are presented theoretically. An analytic expression for the carrier density in the active region of a laser with respect to time is given to discuss the switching-off time. The numerical results show that the switching-on time and the switching-off time are governed by different mechanisms. They are related to the laser parameters for the free-running laser. They also depend on the optical power and the time duration of the input optical pulse and the frequency detuning between the frequency of the free-running laser and that of the input optical pulse. A small frequency detuning is desired to reduce both the switching-on and switching-off times. However, there is an optimal detuning to maximize the energy of the output optical pulse. On the other hand, for fixed detuning and injection power, a larger bias current results in a shorter switching-off time, but a lower bias current results in a shorter switching-on time.
Source Title: IEEE Journal of Quantum Electronics
ISSN: 00189197
DOI: 10.1109/3.502378
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.