Please use this identifier to cite or link to this item: https://doi.org/10.1109/3.502378
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dc.titleDynamic properties of optically switched bistable semiconductor lasers
dc.contributor.authorLi, L.
dc.contributor.authorHaldar, M.K.
dc.contributor.authorTeo, C.Y.
dc.contributor.authorMendis, F.V.C.
dc.date.accessioned2014-06-17T06:47:12Z
dc.date.available2014-06-17T06:47:12Z
dc.date.issued1996-06
dc.identifier.citationLi, L., Haldar, M.K., Teo, C.Y., Mendis, F.V.C. (1996-06). Dynamic properties of optically switched bistable semiconductor lasers. IEEE Journal of Quantum Electronics 32 (6) : 1009-1014. ScholarBank@NUS Repository. https://doi.org/10.1109/3.502378
dc.identifier.issn00189197
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62080
dc.description.abstractThe dynamic properties of optically switched semiconductor lasers biased from below-to-above threshold are presented theoretically. An analytic expression for the carrier density in the active region of a laser with respect to time is given to discuss the switching-off time. The numerical results show that the switching-on time and the switching-off time are governed by different mechanisms. They are related to the laser parameters for the free-running laser. They also depend on the optical power and the time duration of the input optical pulse and the frequency detuning between the frequency of the free-running laser and that of the input optical pulse. A small frequency detuning is desired to reduce both the switching-on and switching-off times. However, there is an optimal detuning to maximize the energy of the output optical pulse. On the other hand, for fixed detuning and injection power, a larger bias current results in a shorter switching-off time, but a lower bias current results in a shorter switching-on time.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/3.502378
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1109/3.502378
dc.description.sourcetitleIEEE Journal of Quantum Electronics
dc.description.volume32
dc.description.issue6
dc.description.page1009-1014
dc.description.codenIEJQA
dc.identifier.isiutA1996UN39800014
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