Correlation of scanning thermal microscopy and near-field cathodoluminescence analyses on a blue GaN light emitting device

Abstract

A scanning near-field thermal microscope and a scanning electron microscope/scanning near-field optical microscope hybrid system for near-field cathodoluminescence investigations were used to characterize blue GaN LEDs. Optoelectronic, electronic and thermal device properties are determinable with highest resolution. These results provide an interesting perspective with respect to failure analyses and reliability of the devices. © 2000 Elsevier Science Ltd. All rights reserved.