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Title: Conduction mechanism of semi-insulating polycrystalline silicon films
Authors: Choi, W.K. 
Issue Date: Jan-1995
Citation: Choi, W.K. (1995-01). Conduction mechanism of semi-insulating polycrystalline silicon films. Physica Status Solidi (A) Applied Research 147 (1) : K17-K20. ScholarBank@NUS Repository.
Abstract: The effectiveness of the Poole-Frenkel effect model to explain the charge transport phenomena in semi-insulating polycrystalline silicon (SIPOS) film was demonstrated. The dielectric constant calculated using this model was found to agree with the literature valve. Also demonstrated was the capability of this model to account for the temperature and field dependence of the conductivity of SIPOS films.
Source Title: Physica Status Solidi (A) Applied Research
ISSN: 00318965
Appears in Collections:Staff Publications

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