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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/61958
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dc.titleConduction mechanism of semi-insulating polycrystalline silicon films
dc.contributor.authorChoi, W.K.
dc.date.accessioned2014-06-17T06:45:52Z
dc.date.available2014-06-17T06:45:52Z
dc.date.issued1995-01
dc.identifier.citationChoi, W.K. (1995-01). Conduction mechanism of semi-insulating polycrystalline silicon films. Physica Status Solidi (A) Applied Research 147 (1) : K17-K20. ScholarBank@NUS Repository.
dc.identifier.issn00318965
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/61958
dc.description.abstractThe effectiveness of the Poole-Frenkel effect model to explain the charge transport phenomena in semi-insulating polycrystalline silicon (SIPOS) film was demonstrated. The dielectric constant calculated using this model was found to agree with the literature valve. Also demonstrated was the capability of this model to account for the temperature and field dependence of the conductivity of SIPOS films.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitlePhysica Status Solidi (A) Applied Research
dc.description.volume147
dc.description.issue1
dc.description.pageK17-K20
dc.description.codenPSSAB
dc.identifier.isiutNOT_IN_WOS
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