The influence of nano-oxide layer on magnetostriction of sensing layer in bottom spin valves

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2194117

Title:	The influence of nano-oxide layer on magnetostriction of sensing layer in bottom spin valves
Authors:	Qiu, J.J. Han, G.C. Li, K.B. Liu, Z.Y. Zong, B.Y. Wu, Y.H.
Issue Date:	1-May-2006
Citation:	Qiu, J.J., Han, G.C., Li, K.B., Liu, Z.Y., Zong, B.Y., Wu, Y.H. (2006-05-01). The influence of nano-oxide layer on magnetostriction of sensing layer in bottom spin valves. Journal of Applied Physics 99 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2194117
Abstract:	The magnetostriction coefficient (λs) of ultrathin sputtered polycrystalline as-deposited and annealed Ta Ni81 Fe19 (t) Ta films was studied as a function of the thickness. λs and magnetoresistance (MR) of bottom-type spin valves (SVs) with nano-oxide layer (NOL) added in the pinned layer were investigated by using NiFe, Co90 Fe10, and CoFeNiFeCoFe layers as free layer (FL), respectively. λs of SV with NOL increased slightly except that of CoFe FL. NOLs were added at different positions to study the effects of NOL on λs of CoFe FL. All λs of CoFe FL change from negative to positive and its absolute value also increases significantly with CoFe Ox related NOL added below. Our λs and surface roughness results indicated that the structure of the film not the roughness dominates λs of ultrathin FL in SVs. © 2006 American Institute of Physics.
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/57624
ISSN:	00218979
DOI:	10.1063/1.2194117
Appears in Collections:	Staff Publications

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