Please use this identifier to cite or link to this item:
|Title:||The influence of nano-oxide layer on magnetostriction of sensing layer in bottom spin valves|
|Citation:||Qiu, J.J., Han, G.C., Li, K.B., Liu, Z.Y., Zong, B.Y., Wu, Y.H. (2006-05-01). The influence of nano-oxide layer on magnetostriction of sensing layer in bottom spin valves. Journal of Applied Physics 99 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2194117|
|Abstract:||The magnetostriction coefficient (λs) of ultrathin sputtered polycrystalline as-deposited and annealed Ta Ni81 Fe19 (t) Ta films was studied as a function of the thickness. λs and magnetoresistance (MR) of bottom-type spin valves (SVs) with nano-oxide layer (NOL) added in the pinned layer were investigated by using NiFe, Co90 Fe10, and CoFeNiFeCoFe layers as free layer (FL), respectively. λs of SV with NOL increased slightly except that of CoFe FL. NOLs were added at different positions to study the effects of NOL on λs of CoFe FL. All λs of CoFe FL change from negative to positive and its absolute value also increases significantly with CoFe Ox related NOL added below. Our λs and surface roughness results indicated that the structure of the film not the roughness dominates λs of ultrathin FL in SVs. © 2006 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 16, 2018
WEB OF SCIENCETM
checked on Jun 26, 2018
checked on Jun 1, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.