Switch-free read operation design and measurement of magnetic tunnel junction magnetic random access memory arrays

Abstract

A switch-free read operation design and cell measurement method for magnetic tunnel junction magnetic random access memory arrays with a peripheral circuitry is presented. The design effectively reduces the shunting effect and maintains the signal at the original level even for the cases when the lead resistance cannot be neglected. It also allowed us to measure the magnetoresistance curve of each cell independently without the need of a transistor or a diode. Both simulation and experiments showed that this method is useful in the readout operation of the tunnel junction magnetic random access memory as well as in the characterization of its individual cells. © 2001 American Institute of Physics.