Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1410875
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dc.titleSwitch-free read operation design and measurement of magnetic tunnel junction magnetic random access memory arrays
dc.contributor.authorZheng, Y.
dc.contributor.authorWang, X.
dc.contributor.authorYou, D.
dc.contributor.authorWu, Y.
dc.date.accessioned2014-06-17T03:07:42Z
dc.date.available2014-06-17T03:07:42Z
dc.date.issued2001-10-22
dc.identifier.citationZheng, Y., Wang, X., You, D., Wu, Y. (2001-10-22). Switch-free read operation design and measurement of magnetic tunnel junction magnetic random access memory arrays. Applied Physics Letters 79 (17) : 2788-2790. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1410875
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57569
dc.description.abstractA switch-free read operation design and cell measurement method for magnetic tunnel junction magnetic random access memory arrays with a peripheral circuitry is presented. The design effectively reduces the shunting effect and maintains the signal at the original level even for the cases when the lead resistance cannot be neglected. It also allowed us to measure the magnetoresistance curve of each cell independently without the need of a transistor or a diode. Both simulation and experiments showed that this method is useful in the readout operation of the tunnel junction magnetic random access memory as well as in the characterization of its individual cells. © 2001 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1410875
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1410875
dc.description.sourcetitleApplied Physics Letters
dc.description.volume79
dc.description.issue17
dc.description.page2788-2790
dc.description.codenAPPLA
dc.identifier.isiut000171594400037
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