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|Title:||Nanowelding of carbon nanotube-metal contacts: An effective way to control the Schottky barrier and performance of carbon nanotube based field effect transistors||Authors:||Nurbawono, A.
|Issue Date:||7-May-2012||Citation:||Nurbawono, A., Zhang, A., Cai, Y., Wu, Y., Feng, Y.P., Zhang, C. (2012-05-07). Nanowelding of carbon nanotube-metal contacts: An effective way to control the Schottky barrier and performance of carbon nanotube based field effect transistors. Journal of Chemical Physics 136 (17) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4711082||Abstract:||Schottky barriers formed at carbon nanotube (CNT)-metal contacts have been well known to be crucial for the performance of CNT based field effect transistors (FETs). Through first principles calculations we show that a nanowelding process can drastically reduce the Schottky barriers at CNT-metal interfaces, resulting in significantly improved conductivity of CNT-based FETs. The proposed nanowelding can be realized by either laser local heating or a heating process via a controllable pulse current. Results presented in this paper may have great implications in future design and applications of CNT-based electronics. © 2012 American Institute of Physics.||Source Title:||Journal of Chemical Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/56768||ISSN:||00219606||DOI:||10.1063/1.4711082|
|Appears in Collections:||Staff Publications|
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