Magnetoelectric spin-fet for memory, logic, and amplifier applications

Abstract

We propose a ballistic magneto-electric device that permits conductance modulation with both electric and magnetic fields applied perpendicular to its current conduction channel. Fields are applied through the ferromagnetic gates deposited on top of a HEMT heterostructure that contains a 2DEG for current conduction. The minimal-coupling Hamiltonian with spatially uniform electrical potentials, and delta Zeeman splitting is solved in the weakcoupling limit for which the Rashba spin orbit coupling is not considered. Ballistic transmission of electrons through a periodic system of zero-gauge double-pair magnetoelectric barriers is studied. Manipulation of barriers' geometrical symmetry and configuration leads to the conception of a spin-FET for non-volatile storage and digital logic operations. The linear modulation of electron spin polarization (|P|) is also studied for its relevance to electrical signal amplification. Perpendicular magnetization of the ferromagnetic gates permits modulation of both |P| and electron transmission (T) threshold, the latter is particularly useful for spin logic design. © 2005 Springer Science+Business Media, Inc.