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|Title:||Accurate modeling of the effects of fringing area interface traps on scanning capacitance microscopy measurement||Authors:||Hong, Y.D.
|Keywords:||Dopant profile extraction
Scanning capacitance microscopy (SCM)
Semiconductor device modeling
|Issue Date:||Mar-2006||Citation:||Hong, Y.D., Yeow, Y.T., Chim, W.K., Yan, J., Wong, K.M. (2006-03). Accurate modeling of the effects of fringing area interface traps on scanning capacitance microscopy measurement. IEEE Transactions on Electron Devices 53 (3) : 499-506. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2005.864367||Abstract:||Scanning capacitance microscopy (SCM) is a dopant profile extraction tool with nanometer spatial resolution. While it is based on the high-frequency MOS capacitor theory, there are crucial second-order effects which make the extraction of dopant profile from SCM data a challenging task. Due to the small size of the SCM probe, the trapped charges in the interface traps at the oxide-silicon dioxide interface surrounding the probe significantly affect the measured SCM data through the fringing electric field created by the trapped charges. In this paper, we present numerical simulation results to investigate the nature of SCM dC/dV data in the presence of interface traps. The simulation takes into consideration the traps' response to the ac signal used to measure dC/dV as well as the fringing field of the trapped charge surrounding the probe tip. In this paper, we present an error estimation of experimental SCM dopant concentration extraction when the interface traps and fringing field are ignored. The trap distribution in a typical SCM sample is also investigated. © 2006 IEEE.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/54865||ISSN:||00189383||DOI:||10.1109/TED.2005.864367|
|Appears in Collections:||Staff Publications|
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