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|Title:||A fully integrated ultra-low power CMOS transmitter module for UWB systems||Authors:||Yuan, T.
|Issue Date:||Oct-2009||Citation:||Yuan, T., Zheng, Y., Li, L.-W., Leong, M.-S. (2009-10). A fully integrated ultra-low power CMOS transmitter module for UWB systems. Microwave and Optical Technology Letters 51 (10) : 2318-2323. ScholarBank@NUS Repository. https://doi.org/10.1002/mop.24632||Abstract:||A fully integrated CMOS ultra-wideband (UWB) transmitter module is proposed for UWB applications. The transmitter module consists of a band-notched UWB antenna and a transmitter IC which integrates a pulse generator, a gating signal generator and driver amplifiers (DAs). The drive amplifier uses a two-stage amplifier - a Class-E amplifier and a Class-A amplifier with switch control, to significantly reduce power consumption (522 μW/20 Mbps). Fabricated using a 0.18-μm CMOS process, the generated pulse then passes through the DA, which not only drives the antenna but also shapes the generated digital signal to meet the Federal Communications Commission spectral mask specification. © 2009 Wiley Periodicals, Inc.||Source Title:||Microwave and Optical Technology Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/54180||ISSN:||08952477||DOI:||10.1002/mop.24632|
|Appears in Collections:||Staff Publications|
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