Growth of well-aligned Bi nanowire on Ag(1 1 1)

Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.apsusc.2009.07.016

Title:	Growth of well-aligned Bi nanowire on Ag(1 1 1)
Authors:	Zhang, H.L. Chen, W. Wang, X.S. Yuhara, J. Wee, A.T.S.
Keywords:	Bismuth Nanowire Scanning tunneling microscopy
Issue Date:	30-Oct-2009
Citation:	Zhang, H.L., Chen, W., Wang, X.S., Yuhara, J., Wee, A.T.S. (2009-10-30). Growth of well-aligned Bi nanowire on Ag(1 1 1). Applied Surface Science 256 (2) : 460-464. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2009.07.016
Abstract:	We report the fabrication of one-dimensional (1D) Bi nanowires grown on Ag(1 1 1) with average lateral width from 9 to 20 nm by physical vapor deposition in ultra high vacuum conditions. In situ low-temperature scanning tunneling microscopy analyses reveal that the preferred growth of 1D Bi nanostructures is driven by the highly anisotropic bonding in the crystallographic structure of the Bi(1 1 0) plane. The Bi nanowires grow along Bi [ 1 over(1, ̄) 0 ] direction and align with the [ 1 over(1, ̄) 0 ] directions on Ag(1 1 1). The growth of the Bi nanowires proceeds in a bilayer growth mode resulting from the layer pairing in Bi(1 1 0) which saturates the dangling bonds and lowers the total energy. © 2009 Elsevier B.V. All rights reserved.
Source Title:	Applied Surface Science
URI:	http://scholarbank.nus.edu.sg/handle/10635/52970
ISSN:	01694332
DOI:	10.1016/j.apsusc.2009.07.016
Appears in Collections:	Staff Publications

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