Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.apsusc.2009.07.016
DC FieldValue
dc.titleGrowth of well-aligned Bi nanowire on Ag(1 1 1)
dc.contributor.authorZhang, H.L.
dc.contributor.authorChen, W.
dc.contributor.authorWang, X.S.
dc.contributor.authorYuhara, J.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-05-19T02:52:29Z
dc.date.available2014-05-19T02:52:29Z
dc.date.issued2009-10-30
dc.identifier.citationZhang, H.L., Chen, W., Wang, X.S., Yuhara, J., Wee, A.T.S. (2009-10-30). Growth of well-aligned Bi nanowire on Ag(1 1 1). Applied Surface Science 256 (2) : 460-464. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2009.07.016
dc.identifier.issn01694332
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/52970
dc.description.abstractWe report the fabrication of one-dimensional (1D) Bi nanowires grown on Ag(1 1 1) with average lateral width from 9 to 20 nm by physical vapor deposition in ultra high vacuum conditions. In situ low-temperature scanning tunneling microscopy analyses reveal that the preferred growth of 1D Bi nanostructures is driven by the highly anisotropic bonding in the crystallographic structure of the Bi(1 1 0) plane. The Bi nanowires grow along Bi [ 1 over(1, ̄) 0 ] direction and align with the [ 1 over(1, ̄) 0 ] directions on Ag(1 1 1). The growth of the Bi nanowires proceeds in a bilayer growth mode resulting from the layer pairing in Bi(1 1 0) which saturates the dangling bonds and lowers the total energy. © 2009 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.apsusc.2009.07.016
dc.sourceScopus
dc.subjectBismuth
dc.subjectNanowire
dc.subjectScanning tunneling microscopy
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/j.apsusc.2009.07.016
dc.description.sourcetitleApplied Surface Science
dc.description.volume256
dc.description.issue2
dc.description.page460-464
dc.description.codenASUSE
dc.identifier.isiut000271756700026
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