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Title: Defect-induced magnetism in undoped wide band gap oxides: Zinc vacancies in ZnO as an example
Authors: Xing, G.Z.
Lu, Y.H. 
Tian, Y.F.
Yi, J.B. 
Lim, C.C.
Li, Y.F.
Li, G.P.
Wang, D.D.
Yao, B.
Ding, J. 
Feng, Y.P. 
Wu, T.
Issue Date: 2011
Citation: Xing, G.Z., Lu, Y.H., Tian, Y.F., Yi, J.B., Lim, C.C., Li, Y.F., Li, G.P., Wang, D.D., Yao, B., Ding, J., Feng, Y.P., Wu, T. (2011). Defect-induced magnetism in undoped wide band gap oxides: Zinc vacancies in ZnO as an example. AIP Advances 1 (2) : -. ScholarBank@NUS Repository.
Abstract: To shed light on the mechanism responsible for the weak ferromagnetism in undoped wide band gap oxides, we carry out a comparative study on ZnO thin films prepared using both sol-gel and molecular beam epitaxy (MBE) methods. Compared with the MBE samples, the sol-gel derived samples show much stronger room temperature ferromagnetism with a magnetic signal persisting up to ∼740 K, and this ferromagnetic order coexists with a high density of defects in the form of zinc vacancies. The donor-acceptor pairs associated with the zinc vacancies also cause a characteristic orange-red photoluminescence in the sol-gel films. Furthermore, the strong correlation between the ferromagnetism and the zinc vacancies is confirmed by our first-principles density functional theory calculations, and electronic band alteration as a result of defect engineering is proposed to play the critical role in stabilizing the long-range ferromagnetism. © 2011 Author(s).
Source Title: AIP Advances
ISSN: 21583226
DOI: 10.1063/1.3609964
Appears in Collections:Staff Publications

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