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|Title:||Defect-induced magnetism in undoped wide band gap oxides: Zinc vacancies in ZnO as an example|
|Citation:||Xing, G.Z., Lu, Y.H., Tian, Y.F., Yi, J.B., Lim, C.C., Li, Y.F., Li, G.P., Wang, D.D., Yao, B., Ding, J., Feng, Y.P., Wu, T. (2011). Defect-induced magnetism in undoped wide band gap oxides: Zinc vacancies in ZnO as an example. AIP Advances 1 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3609964|
|Abstract:||To shed light on the mechanism responsible for the weak ferromagnetism in undoped wide band gap oxides, we carry out a comparative study on ZnO thin films prepared using both sol-gel and molecular beam epitaxy (MBE) methods. Compared with the MBE samples, the sol-gel derived samples show much stronger room temperature ferromagnetism with a magnetic signal persisting up to ∼740 K, and this ferromagnetic order coexists with a high density of defects in the form of zinc vacancies. The donor-acceptor pairs associated with the zinc vacancies also cause a characteristic orange-red photoluminescence in the sol-gel films. Furthermore, the strong correlation between the ferromagnetism and the zinc vacancies is confirmed by our first-principles density functional theory calculations, and electronic band alteration as a result of defect engineering is proposed to play the critical role in stabilizing the long-range ferromagnetism. © 2011 Author(s).|
|Source Title:||AIP Advances|
|Appears in Collections:||Staff Publications|
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