Please use this identifier to cite or link to this item:
Title: Investigation of the non-volatile resistance change in noncentrosymmetric compounds
Authors: Herng, T.S. 
Kumar, A.
Ong, C.S. 
Feng, Y.P. 
Lu, Y.H.
Zeng, K.Y. 
Ding, J. 
Issue Date: 2012
Citation: Herng, T.S., Kumar, A., Ong, C.S., Feng, Y.P., Lu, Y.H., Zeng, K.Y., Ding, J. (2012). Investigation of the non-volatile resistance change in noncentrosymmetric compounds. Scientific Reports 2 : -. ScholarBank@NUS Repository.
Abstract: Coexistence of polarization and resistance-switching characteristics in single compounds has been long inspired scientific and technological interests. Here, we report the non-volatile resistance change in noncentrosymmetric compounds investigated by using defect nanotechnology and contact engineering. Using a noncentrosymmetric material of ZnO as example, we first transformed ZnO into high resistance state. Then ZnO electrical polarization was probed and its domains polarized 1806 along the [001]-axis with long-lasting memory effect (.25 hours). Based on our experimental observations, we have developed a vacancy-mediated pseudoferroelectricity model. Our first-principle calculations propose that vacancy defects initiate a spontaneous inverted domains nucleation at grain boundaries, and then they grow in the presence of an electrical field. The propagation of inverted domains follows the scanning tip motion under applied electrical field, leading to the growth of polarized domains over large areas.
Source Title: Scientific Reports
ISSN: 20452322
DOI: 10.1038/srep00587
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on May 23, 2019


checked on May 7, 2019

Page view(s)

checked on May 24, 2019

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.