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|Title:||Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substrates||Authors:||Xu, S.J.
|Issue Date:||Apr-1997||Citation:||Xu, S.J., Chua, S.J., Zhang, X., Zhang, Z.H., Luo, C.P., Yuan, Z.L., Xu, Z.Y., Zhou, J.M. (1997-04). Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substrates. IEEE Journal on Selected Topics in Quantum Electronics 3 (2) : 471-474. ScholarBank@NUS Repository. https://doi.org/10.1109/2944.605695||Abstract:||Low-temperature photoluminescence and excitation spectra from InAs monolayer quantum structures, grown on (311)A, (311)B, and (100) GaAs substrates, are investigated. The structures were grown simultaneously by conventional molecular-beam epitaxy (MBE). The experimental results show that the quality of InAs monolayer on (311)B GaAs substrate is obviously better in crystal quality than those on the two other oriented GaAs substrates. In addition, the transition peaks of the InAs layer grown on (311) GaAs substrates shift to higher energy with respect to that from the InAs layer grown on (100) GaAs substrate.||Source Title:||IEEE Journal on Selected Topics in Quantum Electronics||URI:||http://scholarbank.nus.edu.sg/handle/10635/50584||ISSN:||1077260X||DOI:||10.1109/2944.605695|
|Appears in Collections:||Staff Publications|
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