Please use this identifier to cite or link to this item: https://doi.org/10.1109/2944.605695
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dc.titleOptical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substrates
dc.contributor.authorXu, S.J.
dc.contributor.authorChua, S.J.
dc.contributor.authorZhang, X.
dc.contributor.authorZhang, Z.H.
dc.contributor.authorLuo, C.P.
dc.contributor.authorYuan, Z.L.
dc.contributor.authorXu, Z.Y.
dc.contributor.authorZhou, J.M.
dc.date.accessioned2014-04-23T03:00:25Z
dc.date.available2014-04-23T03:00:25Z
dc.date.issued1997-04
dc.identifier.citationXu, S.J., Chua, S.J., Zhang, X., Zhang, Z.H., Luo, C.P., Yuan, Z.L., Xu, Z.Y., Zhou, J.M. (1997-04). Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substrates. IEEE Journal on Selected Topics in Quantum Electronics 3 (2) : 471-474. ScholarBank@NUS Repository. https://doi.org/10.1109/2944.605695
dc.identifier.issn1077260X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/50584
dc.description.abstractLow-temperature photoluminescence and excitation spectra from InAs monolayer quantum structures, grown on (311)A, (311)B, and (100) GaAs substrates, are investigated. The structures were grown simultaneously by conventional molecular-beam epitaxy (MBE). The experimental results show that the quality of InAs monolayer on (311)B GaAs substrate is obviously better in crystal quality than those on the two other oriented GaAs substrates. In addition, the transition peaks of the InAs layer grown on (311) GaAs substrates shift to higher energy with respect to that from the InAs layer grown on (100) GaAs substrate.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/2944.605695
dc.sourceScopus
dc.subjectPhotoluminescent materials/devices
dc.subjectQuantum wells
dc.subjectSemiconductor heterojunctions
dc.subjectSemiconductor lasers
dc.subjectSemiconductor measurements
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.contributor.departmentINST OF MATERIALS RESEARCH & ENGINEERING
dc.description.doi10.1109/2944.605695
dc.description.sourcetitleIEEE Journal on Selected Topics in Quantum Electronics
dc.description.volume3
dc.description.issue2
dc.description.page471-474
dc.description.codenIJSQE
dc.identifier.isiutA1997XP73200049
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