Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/249578
Title: | NOVEL MODELLING OF RF AND MICROWAVE GAN HEMT DEVICES | Authors: | LUO HAORUI | ORCID iD: | orcid.org/0000-0001-5007-3142 | Keywords: | Modelling, gallium nitride, high electronmobility transistors, radio-frequency, microwave | Issue Date: | 29-Nov-2023 | Citation: | LUO HAORUI (2023-11-29). NOVEL MODELLING OF RF AND MICROWAVE GAN HEMT DEVICES. ScholarBank@NUS Repository. | URI: | https://scholarbank.nus.edu.sg/handle/10635/249578 |
Appears in Collections: | Ph.D Theses (Closed) |
Show full item record
Files in This Item:
There are no files associated with this item.
Google ScholarTM
Check
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.