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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/249578
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dc.titleNOVEL MODELLING OF RF AND MICROWAVE GAN HEMT DEVICES
dc.contributor.authorLUO HAORUI
dc.date.accessioned2024-08-13T02:45:50Z
dc.date.available2024-08-13T02:45:50Z
dc.date.issued2023-11-29
dc.identifier.citationLUO HAORUI (2023-11-29). NOVEL MODELLING OF RF AND MICROWAVE GAN HEMT DEVICES. ScholarBank@NUS Repository.
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/249578
dc.language.isoen
dc.subjectModelling, gallium nitride, high electronmobility transistors, radio-frequency, microwave
dc.typeThesis
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.supervisorYongxin Guo
dc.description.degreePh.D
dc.description.degreeconferredDOCTOR OF PHILOSOPHY (CDE-ENG)
dc.identifier.orcid0000-0001-5007-3142
Appears in Collections:Ph.D Theses (Closed)

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