Please use this identifier to cite or link to this item: https://doi.org/10.1002/adfm.202305386
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dc.titleHigh-Performance Memristors Based on Few-Layer Manganese Phosphorus Trisulfide for Neuromorphic Computing
dc.contributor.authorZhengjin Weng
dc.contributor.authorHaofei Zheng
dc.contributor.authorWei Lei
dc.contributor.authorHelong Jiang
dc.contributor.authorKah Wee Ang
dc.contributor.authorZhiwei Zhao
dc.date.accessioned2024-05-08T05:34:58Z
dc.date.available2024-05-08T05:34:58Z
dc.date.issued2023-11-27
dc.identifier.citationZhengjin Weng, Haofei Zheng, Wei Lei, Helong Jiang, Kah Wee Ang, Zhiwei Zhao (2023-11-27). High-Performance Memristors Based on Few-Layer Manganese Phosphorus Trisulfide for Neuromorphic Computing. Advanced Functional Materials. ScholarBank@NUS Repository. https://doi.org/10.1002/adfm.202305386
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/248323
dc.language.isoen
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.typeArticle
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi10.1002/adfm.202305386
dc.description.sourcetitleAdvanced Functional Materials
dc.published.statePublished
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