Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/238649
Title: DIAMOND FILM GROWTH WITH MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION (MPCVD)
Authors: GU JITENG
ORCID iD:   orcid.org/0000-0002-4778-4020
Keywords: NCD, Chemical Precursor, BEN, Dry-seeding, Diamond Metasurface,
Issue Date: 10-Aug-2022
Citation: GU JITENG (2022-08-10). DIAMOND FILM GROWTH WITH MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION (MPCVD). ScholarBank@NUS Repository.
Abstract: The growth of large area nanocrystalline diamond (NCD) film is of industrial interests because of their potential applications as hard mask. Here, we proposed “dry-seeding” methods to produce diamond grains for subsequent NCD film deposition on wafer-scaled silicon substrate. Owing to the formation of high crystalline diamond grains by “dry-seeding” method, the photochemically induced poly-adamantane, which served as a low-cost and high-density seeding layer, greatly reduced the film residual stress The NCD film grown by another “dry-seeding” method (Bias enhanced nucleation) exhibited ideal optical properties and rendered dynamic structural colors when a periodic array of asymmetric diamond cuboids with high-aspect ratio of ~3.1 was patterned on its surface. Our work demonstrates that the “dry-seeding” method combined with linear antenna MPCVD system can be potentially used for in-line deposition of NCD film mask and growth of high-quality NCD film.
URI: https://scholarbank.nus.edu.sg/handle/10635/238649
Appears in Collections:Ph.D Theses (Open)

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