Please use this identifier to cite or link to this item:
https://doi.org/10.1038/s41467-022-30519-w
DC Field | Value | |
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dc.title | Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing | |
dc.contributor.author | Tang, Baoshan | |
dc.contributor.author | Veluri, Hasita | |
dc.contributor.author | Li, Yida | |
dc.contributor.author | Yu, Zhi Gen | |
dc.contributor.author | Waqar, Moaz | |
dc.contributor.author | Leong, Jin Feng | |
dc.contributor.author | Sivan, Maheswari | |
dc.contributor.author | Zamburg, Evgeny | |
dc.contributor.author | Zhang, Yong-Wei | |
dc.contributor.author | Wang, John | |
dc.contributor.author | Thean, Aaron V-Y | |
dc.date.accessioned | 2023-03-20T03:14:44Z | |
dc.date.available | 2023-03-20T03:14:44Z | |
dc.date.issued | 2022-06-01 | |
dc.identifier.citation | Tang, Baoshan, Veluri, Hasita, Li, Yida, Yu, Zhi Gen, Waqar, Moaz, Leong, Jin Feng, Sivan, Maheswari, Zamburg, Evgeny, Zhang, Yong-Wei, Wang, John, Thean, Aaron V-Y (2022-06-01). Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing. NATURE COMMUNICATIONS 13 (1). ScholarBank@NUS Repository. https://doi.org/10.1038/s41467-022-30519-w | |
dc.identifier.issn | 2041-1723 | |
dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/238260 | |
dc.description.abstract | Realization of high-density and reliable resistive random access memories based on two-dimensional semiconductors is crucial toward their development in next-generation information storage and neuromorphic computing. Here, wafer-scale integration of solution-processed two-dimensional MoS2 memristor arrays are reported. The MoS2 memristors achieve excellent endurance, long memory retention, low device variations, and high analog on/off ratio with linear conductance update characteristics. The two-dimensional nanosheets appear to enable a unique way to modulate switching characteristics through the inter-flake sulfur vacancies diffusion, which can be controlled by the flake size distribution. Furthermore, the MNIST handwritten digits recognition shows that the MoS2 memristors can operate with a high accuracy of >98.02%, which demonstrates its feasibility for future analog memory applications. Finally, a monolithic three-dimensional memory cube has been demonstrated by stacking the two-dimensional MoS2 layers, paving the way for the implementation of two memristor into high-density neuromorphic computing system. | |
dc.language.iso | en | |
dc.publisher | NATURE PORTFOLIO | |
dc.source | Elements | |
dc.subject | Science & Technology | |
dc.subject | Multidisciplinary Sciences | |
dc.subject | Science & Technology - Other Topics | |
dc.subject | MOS2 | |
dc.subject | INTEGRATION | |
dc.subject | NANOSHEETS | |
dc.subject | SHEETS | |
dc.type | Article | |
dc.date.updated | 2023-03-18T03:15:13Z | |
dc.contributor.department | DEAN'S OFFICE (ENGINEERING) | |
dc.contributor.department | MATERIALS SCIENCE AND ENGINEERING | |
dc.contributor.department | ELECTRICAL AND COMPUTER ENGINEERING | |
dc.contributor.department | MATERIALS SCIENCE AND ENGINEERING | |
dc.description.doi | 10.1038/s41467-022-30519-w | |
dc.description.sourcetitle | NATURE COMMUNICATIONS | |
dc.description.volume | 13 | |
dc.description.issue | 1 | |
dc.published.state | Published | |
Appears in Collections: | Elements Students Publications Staff Publications |
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Nature Communications_2022_Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing.pdf | Published version | 6.17 MB | Adobe PDF | OPEN | Published | View/Download |
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