Please use this identifier to cite or link to this item: https://doi.org/10.1038/s41467-020-20209-w
Title: Effectively modulating thermal activated charge transport in organic semiconductors by precise potential barrier engineering
Authors: Huang, Yinan
Gong, Xue
Meng, Yancheng
Wang, Zhongwu
Chen, Xiaosong
Li, Jie
Ji, Deyang
Wei, Zhongming
Li, Liqiang
Hu, Wenping 
Issue Date: 4-Jan-2021
Publisher: Nature Research
Citation: Huang, Yinan, Gong, Xue, Meng, Yancheng, Wang, Zhongwu, Chen, Xiaosong, Li, Jie, Ji, Deyang, Wei, Zhongming, Li, Liqiang, Hu, Wenping (2021-01-04). Effectively modulating thermal activated charge transport in organic semiconductors by precise potential barrier engineering. Nature Communications 12 (1) : 21. ScholarBank@NUS Repository. https://doi.org/10.1038/s41467-020-20209-w
Rights: Attribution 4.0 International
Abstract: The temperature dependence of charge transport dramatically affects and even determines the properties and applications of organic semiconductors, but is challenging to effectively modulate. Here, we develop a strategy to circumvent this challenge through precisely tuning the effective height of the potential barrier of the grain boundary (i.e., potential barrier engineering). This strategy shows that the charge transport exhibits strong temperature dependence when effective potential barrier height reaches maximum at a grain size near to twice the Debye length, and that larger or smaller grain sizes both reduce effective potential barrier height, rendering devices relatively thermostable. Significantly, through this strategy a traditional thermo-stable organic semiconductor (dinaphtho[2,3-b:2?,3?-f]thieno[3,2-b]thiophene, DNTT) achieves a high thermo-sensitivity (relative current change) of 155, which is far larger than what is expected from a standard thermally-activated carrier transport. As demonstrations, we show that thermo-sensitive OFETs perform as highly sensitive temperature sensors. © 2021, The Author(s).
Source Title: Nature Communications
URI: https://scholarbank.nus.edu.sg/handle/10635/233609
ISSN: 2041-1723
DOI: 10.1038/s41467-020-20209-w
Rights: Attribution 4.0 International
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