Please use this identifier to cite or link to this item: https://doi.org/10.3390/jlpea11010006
Title: Design of an ultra-low voltage bias current generator highly immune to electromagnetic interference
Authors: Aiello, Orazio 
Keywords: Current correlator
Current generators
Current mirrors
Current-splitter
Electromagnetic Interference (EMI)
Ultra-Low-Voltage (ULV) ICs
Issue Date: 20-Jan-2021
Publisher: MDPI AG
Citation: Aiello, Orazio (2021-01-20). Design of an ultra-low voltage bias current generator highly immune to electromagnetic interference. Journal of Low Power Electronics and Applications 11 (1) : 1-11. ScholarBank@NUS Repository. https://doi.org/10.3390/jlpea11010006
Rights: Attribution 4.0 International
Abstract: The paper deals with the immunity to Electromagnetic Interference (EMI) of the current source for Ultra-Low-Voltage Integrated Circuits (ICs). Based on the properties of IC building blocks, such as the current-splitter and current correlator, a novel current generator is conceived. The proposed solution is suitable to provide currents to ICs operating in the sub-threshold region even in the presence of an electromagnetic polluted environment. The immunity to EMI of the proposed solution is compared with that of a conventional current mirror and evaluated by analytic means and with reference to the 180 nm CMOS technology process. The analysis highlights how the proposed solution generates currents down to nano-ampere intrinsically robust to the Radio Frequency (RF) interference affecting the input of the current generator, differently to what happens to the output current of a conventional mirror under the same conditions. © 2021 by the author. Licensee MDPI, Basel, Switzerland.
Source Title: Journal of Low Power Electronics and Applications
URI: https://scholarbank.nus.edu.sg/handle/10635/233266
ISSN: 2079-9268
DOI: 10.3390/jlpea11010006
Rights: Attribution 4.0 International
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